Properties and Device Applications of Deep Quantum Well Resonan’i Tunneling Structures
نویسندگان
چکیده
A self-conststent quantum mechanical simulation is used to study the effects of doping, spacer layers, harrier height, harrier wdth and well doping on the bound state and bound state charge in a deep quantum well resonant tunneling structure. Experimental reaulta for the GaAs and InP heteroatructure material system are presented. Finally various device applications. such as microwaw video detector?, charge transfer devices. and three terminal devices arc proposed.
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